2D interfaces in future transistors

Researchers generally expect that transistors fabricated with 2D crystals will have perfectly flat 2D-2D and 3D-2D interfaces (regions of contact). But new evidence shows that in reality, there are obvious bending and nanogaps at these interfaces.
Client
NIST
Date
June 2022
Categories
Illustration Diagram
Link
https://www.nist.gov/news-events/news/2022/06/road-tiny-transistors-how-flat-flat

Project Notes

I created an supplementary image to show the difference between a traditional MOSFET vs. a 2D FET:

The general architecture of a traditional MOSFET vs. a 2D FET. A FET (field-effect transistor) is a device for regulating the flow of charge carriers (such as electrons) across a channel with three terminals: a source, a drain, and a gate. A MOSFET (metal oxide semiconductor field effect transistor) is by far the most widely used type of FET and is a building block of modern electronics, used in commercial electronic devices for more than 50 years. One main difference between the traditional 3D MOSFET and the “emerging technology” of the 2D FET is that the channel in a traditional MOSFET is in a 3D material, while a 2D FET’s channel is a 2D material.